The DualBeam FIB microscope is an advanced device that incorporates an ion beam with an electron microscope (FEG-SEM, reaching a resolution of 0.8 nm, which enables a magnification of million times) for attachment, nanostructuring, 3D tomography of materials and thin films, and cross-sectional analysis of devices.
The applications of this instrument range from industrial quality and defect analysis to the preparation of samples for TEM investigations through micromanipulation and production and analysis of cross-sections. The characterization of industrial materials using the DualBeam FIB microscope includes quality control of constituents, analysis of the homogeneity, detection of defects and unwanted phases, and phase and pore volume determination with nanometer resolution. The instrument is suitable also for the preparation of nano-objects and electron lithography.
The DualBeam FIB microscope is equipped for in situ EDS analysis, allowing the chemical analysis of surfaces and generated cross-sections (depth profiling). The EDS detector can perform qualitative and quantitative elemental analysis, elemental line scan, and elemental mapping.
In academic studies, this microscope has been applied for surface analysis of materials, 3D tomography, production of TEM lamella in different orientations, nanometer-sized circuits (e.g., superconducting circuits such as nTron), investigations with high spatial and depth resolution, analysis of semiconductor elements on Si substrate, production and analysis of cross sections, production of nano-objects and lithography, characterization of heterostructures (graphene, h-BN, FET monolayers).
The DualBeam FIB microscope can perform micromanipulation, using a built-in micromanipulator. Small objects can be attached inside the microscope and transferred onto a substrate or mounted for further processing at a different location (e.g., using High-Angle Annular Dark Field STEM or High-Resolution TEM). The instrument can be applied, for example, in the micromanipulation of nanowires, the preparation of memory elements based on TaS2 (CCM), and the fabrication of nanosized devices onto E-Chip for TEM in situ experiments (electrical and thermal).
This microscope is also suitable for 3D tomography, an advanced technique that allows the construction of 3D models of the bulk of the sample with 10 nm resolution. Using this technique we can determine the three-dimensional constitution of specific phases within the bulk and quantitatively describe higher-order microstructural parameters such as specific surface area, specific interface area, connectivity of phases, triple phase boundary density, tortuosity, porosity, etc.
Facility managers:
- Dr. Bojan Ambrožič, a researcher with expertise in geology and material science, FIB sample preparation, FIB analysis, and FIB lamella preparation, a leading Slovenian expert in the field of meteoritics. Dr. Bojan Ambrožič is also the head of the AQDL laboratory.
- Dr. Gregor Kapun, a researcher with expertise in material science, nanotechnology, all-solid-state battery, fuel cells, FIB sample preparation and analysis, Advanced FIB processes, FIB Tomography, FIB lamella preparation, FIB sample preparation for In Situ TEM experiments, UHR-SEM analysis.
Availability
Location
Nanocenter in Ljubljana
Jamova 39, Building B, Jožef Stefan Institute
Access
The instrument is available for 20% of machine time for network activities.
Output examples
Example of quality and defect analysis on a material.
